Capacity: 1 TB
Controller: Samsung
NAND Flash: Samsung V-NAND TLC
DRAM Cache: 1GB LPDDR4
Dimensions: 80 x 22 x 2.3 mm
Format: M.2 (2280)
Sequential read: 7450 MB/s
Sequential write: 6900 MB/s
Random read (QD 1, thread 1): 22,000 IOPS
Random write (QD 1, thread 1): 80,000 IOPS
Random read (QD 32, thread 16): 1,200,000 IOPS
Random write (QD 32, thread 16): 1,550,000 IOPS
Power consumption: idle 50 mW, read 5.4 W, write 5W
Reliability: TBW 600 TB, MTBF 1.5 million hours
Supported features: TRIM, Garbage Collection, S.M.A.R.T.
Security: AES 256-bit encryption, TCG/Opal V2.0, Encrypted Drive IEEE1667