• Samsung NVMe SSD powered by V-NAND technology
• Up to 14,700 MB/s sequential read and 13,400 MB/s sequential write
• Up to 2,200K IOPS random read and 2,600K IOPS random write

Specifications
Nominal capacity: 1,000 GB
Form factor: M.2 (2280)
Interface: PCIe® 5.0 x4, NVMe™ 2.0
Dimensions: (WxHxD) Max. 80.15 x Max. 22.15 x Max. 2.38 mm
Weight: 9.0 g
Storage memory: Samsung V-NAND TLC
Controller: Samsung proprietary controller
Cache: Samsung 1 GB Low Power DDR4X SDRAM
TRIM support: Supported
S.M.A.R.T. support: Supported
Encryption support: 256-bit AES encryption (class 0) TCG/Opal IEEE1667 (encrypted drive)
WWNNi support: Supported
Device sleep mode support: Yes
Sequential read: Up to 14,700 MB/s
Sequential write: Up to 13,300 MB/s
Random read: Up to 1,850,000 IOPS
Random write: Up to 2,600,000 IOPS
Allowed voltage: 3.3 V ± 5% allowed voltage
Reliability (MTBF): 1.5 million hours of reliability (MTBF)
Operating temperature: 0 – 70 ℃ Operating temperature
Shock: 1500 G & 0.5 ms (half sine)
Installation kit: Not available
SW management: Magician software for SSD management